Structure-Enhanced MOSFET Degradation Due to Hot-Electron Injection

IEEE Electron Device Letters

Volumn 5, Issue 3, 1984, Pages 71-74

  Hsu, F C ^a   Grinolds, H R ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021401123     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25836     Document Type: Article

References (9)

1. E. Takeda and N. Suzuki, “An empirical model for device degradation due to hot-carrier injection,” IEEE Electron Device Lett., vol. EDL-4, pp. 111, 1983.
2. H. Matsumoto et al., “Effect of long-term stress on IGFET degradations due to hot electron trapping, “IEEE Trans.Electron Devices, vol. ED-28, pp. 923, 1981.
3. K. K. Ng and G. W. Taylor, “Effects of hot-carrier trapping in n- and p-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 871, 1983.
4. S. Tam and F-C. Hsu, “A physical model for hot-electron induced degradation in MOSFET's,” presented at IEEE Semiconductor Interface Specialist Conf., Fort Lauderdale, FL, Dec. 1983.
5. E. Takeda et al., “Submicrometer MOSFET structure for minimizing hot-carrier generation,” IEEE Trans. Electron Devices, vol. ED-29, pp. 611, 1982.
6. S. Ogura et al., “Design and characteristics of the lightly doped drain-source (LDD) IGFET,” IEEE Trans. Electron. Devices, vol. ED-27, pp. 1359, 1980.
7. S. Ogura et al., in IEDM Tech. Dig., 1982, pp. 718.
8. D. Schmitt and G. Dorda, “Interface states in MOSFET's due to hot-electron injection determined by the charge pumping technique,” Electron. Lett., vol. 17, pp. 761, 1981.
9. F-C. Hsu and S. Tam, “Relationship between MOSFET degradation and hot-electron induced interface-state generation,” IEEE Electron Device Lett., Feb 1984.