The Influence of the Measurement Setup on Enhanced AC Hot Carrier Degradation of MOSFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 1, 1990, Pages 310-313

  Bellens, R ^a   Heremans, P ^a   Groeseneken, G ^a   Maes, H E ^a   Weber, W ^b  

^a IMEC   (Belgium)

^b SIEMENS CORPORATE RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET--DEGRADATION; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

HOT CARRIERS; LATCH-UP EFFECT;

TRANSISTORS, FIELD EFFECT;

EID: 0025233051     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43834     Document Type: Article

References (15)

1. K.-L. Chen, S. Sailer, and R. Shah, “The case of ac stress in the hotcarrier effect,” IEEE Trans. Electron Devices, vol. ED-33, no. 3, pp. 424–426, 1986.
2. J. Y. Choi, P. K. Ko, and C. Hu, “Hot-carrier-induced MOSFET degradation under ac stress,” IEEE Electron Device Lett., vol. ED18, no. 8, pp. 333–335, 1987.
3. J. Y. Choi, P. K. Ko, and C. Hu, “Hot-carrier-induced MOSFET degradation: AC versus dc stressing,” in Proc. Symp. VLSI Technology, 1987, pp. 45–46.
4. M. M. Kuo et. al., “Simulation of MOSFET lifetime under ac hotelectron stress,” IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 1004–1011, 1988.
5. T.-C. Ong, K. Seki, P. K. Ko, and C. Hu, “Hot-carrier-induced degradation in p-MOSFET’s under ac stress,” IEEE Electron Device Lett., vol. 9, no. 5, pp. 211–213, 1988.
6. R. Bellens, P. Heremens, G. Groeseneken, and H. E. Maes, “Analysis of Hot carrier degradation in ac stressed n-channel MOS transistors using the charge pumping technique,” J. Phys., vol. 49, p. C4651, 1988.
7. —, “Analysis of mechanisms for the enhanced degradation during ac hot carrier stress of MOSFET’s,” in IEDM Tech. Dig., 1988, p. 212–215.
8. W. Weber, C. Werner, and G. Dorda, “Degradation of nMOS transistors after pulsed stress,” IEEE Electron Device Lett., vol. ED15, no. 12, pp. 518–520, 1984.
9. W. Weber, C. Werner, and A. V. Schwerin, “Lifetimes and substrate currents in static and dynamic hot-carrier degradation,” in IEDM Tech. Dig., 1986, pp. 390–393.
10. T. Horiuchi, H. Mikoshiba, K. Nakamura, K. Hamano, “A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress,” IEEE Electron Device Lett., vol. EDL-7, no. 6, pp. 337–339, 1986.
11. Y. Igura and E. Takeda, “Hot-carrier degradation mechanism under ac stress in MOSFET’s,” in Proc. Symp. VLSI Technol., 1987, pp. 47–48.
12. M. Aoki, K. Yano, T. Masuhara, and K. Komiyaji, “Hot-carrier effects under pulsed stress in CMOS devices,” in Proc. Symp. VLSI Technol., 1987, pp. 49–50.
13. W. Weber, “Dynamic stress experiments for understanding hot-carrier degradation phenomena,” IEEE Trans. Electron Devices, vol. 35, no. 9, pp. 1476–1486, 1988.
14. W. Hänsch and W. Weber, “The effect of transients on hot carriers,” IEEE Electron Device Lett., vol. 10, no. 6, pp. 252–254, 1989.
15. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, “A reliable approach to charge-pumping measurements in MOS transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 42-53, 1984.