Role of Hot-Hole Injection in Hot-Carrier Effects and the Small Degraded Channel Region in MOSFET'S

IEEE Electron Device Letters

Volumn 4, Issue 9, 1983, Pages 329-331

  Takeda, E ^a   Hagiwara, T ^a   Shimizu, A ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0020815021     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1983.25751     Document Type: Article

References (9)

1. H. Gesch, J. P. Leburton, and G. E. Dorda, “Generation of interface states by hot-hole injection in MOSFET's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 913–918, May 1982.
2. E. Takeda, Y. Nakagome, H. Kume, and S. Asai, “New hot-carrier injection and device degradation in submicron MOSFET's,” to be published in the special issue of the IEE Proc. VLSI, Apr. 1983.
3. R. B. Fair and R. C. Sun, “Threshold-voltage instability in MOSFET's due to channel hot-hole emission,” IEEE Trans. Electron Devices, vol. ED-28, pp. 83–93, Jan. 1981.
4. Y. Nakagome, E. Takeda, H. Kume, and S. Asai, “New observation of hot-carrier injection phenomena,” in Proc. 14th Conf. Solid-State Devices Tech. Dig., Aug. 1982, p. 63.
5. T. Katsube, I. Sakata, and T. Ikoma, “Hot hole effect on surface-states density and minority-carrier generation rates in Si-MOS diodes measured by DLT's,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1238–1243, July, 1980.
6. E. Takeda, H. Kume, Y. Nakagome, and S. Asai, “An As-P(n + -n–) double diffused drain MOSFET for VLSIs,” in Dig. Tech. Pap. 1982 Symp. VLSI Tech., Oiso, Japan, pp. 40–41, Sept. 1982, pp. 40–41.
7. D. Schmitt and G. Dorda, “Interface states in MOSFET's due to hot-electron injection determined by the charge pumping technique,” Electron. Lett., vol. 17, Oct. 1981.
8. A. B. M. Elliot, “The use of charge pumping currents to measure surface state densities in MOS transistors,” Solid-State Electron., vol. 19, pp. 241–247, 1976.
9. B. Eitan and D. Frohman-Bentchkowsky, “Electron trapping in SiO2, An injection mode dependent phenomenon,” in IEDM Tech. Dig., 1981, pp. 604–607.