A Model for Hot-Electron-Induced MOSFET Linear-Current Degradation Based on Mobility Reduction Due to Interface-State Generation

IEEE Transactions on Electron Devices

Volumn 38, Issue 6, 1991, Pages 1362-1370

  Chung, James E ^a   Ko, Ping Keung ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

HOT ELECTRONS; N-CHANNEL MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026171585     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81627     Document Type: Article

References (23)

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