Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma

IEEE Transactions on Plasma Science

Volumn 26, Issue 6, 1998, Pages 1700-1712

  Buiu, Octavian ^a   Kennedy, Gary P ^a   Gärtner, Mariuca ^a   Taylor, Stephen ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Inductively coupled plasma discharge; Plasma oxidation; Sic>2; Silicon oxynitride

Indexed keywords

ANODIC OXIDATION; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC PROPERTIES; ELECTRIC DISCHARGES; ELLIPSOMETRY; OXYGEN; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON NITRIDE; THERMAL EFFECTS;

INDUCTIVELY-COUPLED PLASMA (ICP) DISCHARGES;

SEMICONDUCTING FILMS;

EID: 0032318155     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.747889     Document Type: Article

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