Fourier transform infrared study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 3, 1995, Pages 607-613

  Lu, Z ^a   Stevens, G ^a   Williams, M J ^a   Lucovskv, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND DISSOCIATION; BONDED HYDROGEN; ELECTRICAL PROPERTY; FILM DEPOSITION; FOURIER TRANSFORM INFRARED STUDIES; H-BONDING; HYDROGENATED AMORPHOUS SILICON; POST-DEPOSITION; REMOTE PLASMAS; SI-N BONDS; SILICON NITRIDE FILM; SOURCE GAS; THERMAL RELEASE;

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL REACTIONS; DEUTERIUM; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROGEN; PASSIVATION; PLASMA DEPOSITION; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 21844491468     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579794     Document Type: Conference Paper

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