Plasma-grown oxides on silicon with extremely low interface state densities

Microelectronics Journal

Volumn 25, Issue 7, 1994, Pages 485-489

  Kennedy, G P ^a   Taylor, S ^a   Eccleston, W ^a   Uren, M J ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b DRA   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; FILM GROWTH; MICROELECTRONIC PROCESSING; OXIDATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA;

INTERFACE TRAP DENSITIES; PLASMA GROWTH;

SEMICONDUCTING SILICON;

EID: 0028529317     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(94)90031-0     Document Type: Article

References (10)

1. Diffusion of delta doped boron in silicon following oxidation
2. Silicon boron delta doped FET: growth and fabrication
3. A review of the plasma oxidation of silicon and its applications
4. 2 films by inductively coupled low temperature plasma anodisation
5. Interface state behaviour of plasma grown oxides following low temperature annealing
6. Theory for the plasma anodisation of silicon under constant voltage and constant current conditions
7. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
8. 2 prepared by plasma anodisation