Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 4, 1996, Pages 391-395

  Liang, Z X ^a   Han, Z S ^a   Lou, J S ^a   Wang, L C ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; OXIDATION; OXYGEN; PLASMA APPLICATIONS; SEMICONDUCTOR GROWTH; SILICA;

CATHODIZATION; ELECTRODELESS RF OXYGEN PLASMA CATHODIZATION TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0030126391     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050315     Document Type: Article

References (12)