Silicon boron delta doped FET: Growth and fabrication

Electronics Letters

Volumn 28, Issue 7, 1992, Pages 667-669

  Biswas, R G ^a   Mattey, N L ^a   Phillips, P J ^a   Newstead, S M ^a   Whall, T E ^a   Taylor, S ^b   Gundlach, A ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Field effect transistors; Semiconductor devices and materials; Transistors

Indexed keywords

BORON; DIELECTRIC MATERIALS; INTEGRATED CIRCUITS, VLSI; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON--PLASMAS;

BORON DELTA DOPED FET; GATE DIELECTRICS; PLASMA ENHANCED OXIDE GROWTH;

TRANSISTORS, FIELD EFFECT;

EID: 0026826268     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19920422     Document Type: Article

References (6)

1. MULHOFF, H. M., STEIMLE, M., and DIETL, J.: ‘The impact of hot carrier degradation on scaling of sub-μm CMOS processes’. Proc. 7th Int. Conf. on Insulating films on semiconductors (INFO 91), 1991, Eccleston, Uren, pp. 93-103
2. YAMAGUCHI, K., SHIRAKI, Y., KATAYAMA, Y., and MURAYAMA, Y.: ‘A new short channel MOSFET with an atomic-layer-doped impurity-profile (ALD-MOSFET)’. Proc. 14th Conf. Solid State Devices; Jpn. J. Appl. Phys., 1983, 22, pp. 267-270
3. BOARD, K., CHANDRA, A., and WOOD, C. E. C.: ‘Characteristics of planar doped FET structures’, IEEE Trans., 1981, ED-28, (5), pp. 505-510
4. YAMAGUCHI, K., NAKAGAWA, K., and SHIRAKI, Y.: ‘A new device structure utilizing atomic layer doping (ALD) technology in Si systems’. Ext. Abs. 20th Int. Con. Solid State Devices & Materials, 1988, pp. 17-20
5. SCHUBERT, E. F., FISHER, A., and PLOOG, K.: ‘The delta-doped field effect transistor (δ-FET)’ IEEE Trans., 1986, ED-33, (5), pp. 625-632
6. POWELL, A. R., KUBIAK, R. A., WHALL, T. E., PARKER, E. H. C., and BOWEN, D. K.: ‘X-ray characterisation of boron delta layers in Si and SiGe’. MRS Symp. Proc. on Silicon Molecular Beam Epitaxy, 1991, 220, pp. 115-120