Initial oxidation of silicon (100): a unified chemical model for thin and thick oxide growth rates and interfacial structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1618-1625

  Whidden, T K ^a   Thanikasalam, P ^a   Rack, M J ^a   Ferry, D K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; FILM GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULES; OXIDES; OXYGEN; SEMICONDUCTING SILICON; SILICA; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS;

CHEMICAL MODEL; FILM THICKNESS; KINETIC RATE EQUATIONS; OXYGEN PARTIAL PRESSURE; POWER LAW DEPENDENCE;

OXIDATION;

EID: 0029345260     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587867     Document Type: Article

References (35)