High frequency CV characteristics of plasma oxidised silicon carbide

Electronics Letters

Volumn 33, Issue 1, 1997, Pages 97-98

  Chappel, D C ^a   Smith, J P ^a   Taylor, S ^a   Eccleston, W ^a   Das, M K ^b   Cooper, J A ^b   Melloch, M R ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b PURDUE UNIVERSITY   (United States)

Author keywords

MOS capacitors; Silicon carbide

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE PROPERTIES; MOS DEVICES; OXIDATION; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS; SINGLE CRYSTALS; SUBSTRATES; VOLTAGE MEASUREMENT;

HIGH FREQUENCY CAPACITANCE VOLTAGE CHARACTERISTICS; MOS CAPACITORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA OXIDATION PROCESS;

SILICON CARBIDE;

EID: 0031546339     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970055     Document Type: Article

References (11)

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