Comparison of rf and microwave oxidation systems for the growth of thin oxides at low temperatures

Electronics Letters

Volumn 23, Issue 7, 1987, Pages 309-310

  Taylor, S ^a   Barlow, K J ^b   Eccleston, W ^a   Kiermasz, A ^c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b SIEMENS AG   (Germany)

^c Electrotech   (United Kingdom)

Author keywords

Oxidation; Semiconductor devices and materials

Indexed keywords

OXIDES;

FIXED CHARGE LEVELS; GROWTH KINETICS; MICROWAVE OXIDATION; OXYGEN PLASMA; THIN OXIDES;

SEMICONDUCTING SILICON;

EID: 0023311062     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19870229     Document Type: Article

References (5)

1. Ho, V. A., and Sugano, T.: IEEE Trans., 1980, ED-27, pp. 1436-1443
2. Moruzzi, J. L., Kiermasz, A., and Eccleston, W.: 1982, 24, pp. 605-612
3. Kiermasz, A., Eccleston, W., and Moruzzi, J. L.: 1983, 26, pp. 1167-1173
4. Barlow, K. J., Kiermasz, A., And Eccleston, W.: IEE Proc. I, Solid-State & Electron Devices, 1985, 132, pp. 181-183
5. Barlow, K. J., Kiermasz, A., and Eccleston, W.: Electrochem. Soc., pp. 385-390