Growth and properties of thin SiO2 films by inductively coupled low-temperature plasma anodisation

Semiconductor Science and Technology

Volumn 5, Issue 8, 1990, Pages 824-830

  Zhang, J F ^a   Taylor, S ^a   Eccleston, W ^a   Nield, M ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN; PLASMA ANODIZATION;

CAPACITORS; DIELECTRIC PROPERTIES; PLASMAS; SEMICONDUCTOR DEVICES, MOS;

SILICA;

EID: 0025468497     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/5/8/004     Document Type: Article

References (27)

1. The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of Silicon