Gating high mobility silicon-germanium heterostructures

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 309-312

  Griffin, N ^a   Paul, D J ^a   Pepper, M ^a   Taylor, S ^b   Smith, J P ^b   Eccleston, W ^b   Fernandez J M ^c   Joyce, B A ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

PLASMA OXIDES; TWO DIMENSIONAL ELECTRON GAS;

GATES (TRANSISTOR);

EID: 0031071843     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00137-2     Document Type: Article

References (10)

1. T. Yamada, J.-R. Zhou, H. Miyata and D.K. Ferry, IEEE Trans. Elec. Dev., 41 (1994) 1513.
2. S.F. Nelson, K. Ismail, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 63, 367 (1993)
3. K. Ismail, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 64, 3124 (1994)
4. S. Taylor, J.F. Zhang and W. Eccleston, Semicond. Sci. Tech., 8 (1993) 1426.
5. J.F. Zhang, S. Taylor, W. Eccleston and M Nield, Semicond. Sci. Tech., 5 (1990) 824.
6. I.S. Goh, J.F. Zhang, S. Hall, W. Eccleston and K Werner, Semicond. Sci. Tech., 10 (1995) 818.
7. A. Sadek, K. Ismail, M.A. Armstrong, D.A. Antoniadis and F. Stern, IEEE Trans. Electron Devices, 43 (1996) 1224.
8. A. Matsumura, J.M. Fernández, T.J. Thornton, R.S. Prasad, S.N. Holmes, X.M. Zhang, M.H. Xie, J. Zhang and B.A. Joyce, Semicond. Sci. Tech., 10 (1995) 1247.
9. K. Ismail, M. Arafa, F. Stern, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 66 (1995) 842
10. J.F. Zhang, P. Watkinson, S. Taylor and W. Eccleston, Appl. Surf. Sci. 39 (1989) 374