Low-Temperature Gate Dielectrics Formed By Plasma Anodisation Of Silicon Nitride

Electronics Letters

Volumn 24, Issue 20, 1988, Pages 1269-1270

  Goswami, R ^a   Butcher, J B ^a   Ginige, R ^a   Zhang, J F ^b   Taylor, S ^b   Eccleston, W ^b  

^a MIDDLESEX UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Dielectrics; MIS devices; Semiconductor devices and materials; Silicon

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SILICON NITRIDE;

GATE DIELECTRICS; INTERFACE TRAP DENSITY; LOWER FIXED CHARGE; OXYGEN PLASMA; PECVD; PLASMA ANODIZATION;

SEMICONDUCTOR DEVICES, MIS;

EID: 0024070988     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19880864     Document Type: Article

References (4)

1. Taylor, s., barlow, к. j., eccleston, w., and kiermasz, a.: 'Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures', Electron. Lett., 1987, 23, pp. 309-310
2. Taylor, s., eccleston, w., and watkinson, p.: 'Advances in electrical properties of plasma-grown oxides of silicon', Jpn. J. Appi Phys., 1987, 23, pp. 732-733
3. LUONGO, J. P.: 'IR study of amorphous silicon nitride films', Appl. Spectrosc., 1984, 38, pp. 195-199
4. brews, j. r.: 'Rapid interface parametrization using a single MOS conductance curve', Solid-State Electron., 1983, 26, pp. 711-716