Oxidation of crystalline Si in an O2 plasma: Growth kinetics and oxide characterization

Journal of Applied Physics

Volumn 81, Issue 10, 1997, Pages 6996-7005

  Martinet, C ^a,c   Devine, R A B ^a   Brunel, M ^b  

^a ORANGE LABS   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000986762     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365235     Document Type: Article

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