A systematic investigation of N-channel delta-doped MOSFETs grown by M.B.E.

Microelectronic Engineering

Volumn 19, Issue 1-4, 1992, Pages 743-746

  O'Neill, A G ^a   Wood, A C G ^a   Phillips, P ^b   Whall, T E ^b   Parker, E H C ^b   Gundlach, A ^c   Taylor, S ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

^d UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

DELTA-DOPED MOSFET; N-CHANNEL MOSFET;

MOSFET DEVICES;

EID: 0026926960     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(92)90535-Y     Document Type: Article

References (4)

1. Characteristics of planar doped FET structures