The effect of discharge conditions on the inductively coupled plasma oxidation of silicon

Vacuum

Volumn 38, Issue 8-10, 1988, Pages 643-646

  Taylor, S ^a   Kennedy, G ^a   Eccleston, W ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2442525719     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(88)90434-4     Document Type: Article

References (14)

1. Selective anodic oxidation of silicon in oxygen plasma
2. Plasma anodization of silicon at room temperature
3. Transport number measurements during plasma anodization of Si, GaAs, and ZrSi2
4. A method of formation of thin oxide films on silicon in a microwave magnetoactive oxygen plasma