Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates

Annual Device Research Conference Digest

Volumn , Issue , 1999, Pages 38-41

  Palmour, J W ^a   Allen, S T ^a   Sheppard, S T ^a   Pribble, W L ^a   Sadler, R A ^a   Alcorn, T S ^a   Ring, Z ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ENERGY GAP; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

GALLIUM NITRIDE; MAXIMUM AVAILABLE GAIN (MAG);

MESFET DEVICES;

EID: 0033363836     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)