Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 412-415

  Bradley, Shawn T ^a   Young, Alexander P ^a   Brillson, Leonard J ^a   Murphy, Michael J ^b   Schaff, William J ^b   Eastman, Lester F ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LUMINESCENCE; PIEZOELECTRICITY;

ALUMINUM GALLIUM NITRIDE; ELECTRON BEAM ENERGY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035279403     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906428     Document Type: Article

References (7)

1. Results, potential, and challenges of high power GaN-based transistors
2. High-frequency AlGaN/GaN polarization induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
3. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures
4. Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
5. Localized states at InGaN/GaN quantum well interfaces
6. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells
7. Low energy cathodoluminescence spectroscopy of semiconductor interfaces