Deep traps in high resistivity AlGaN films

Solid-State Electronics

Volumn 42, Issue 5, 1998, Pages 831-838

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Redwing, J M ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Epitronics/ATMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HOLE TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOCURRENTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

ALUMINUM GALLIUM NITRIDE; PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS);

SEMICONDUCTING FILMS;

EID: 0032065032     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00089-6     Document Type: Article

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