High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high power performance

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 925-927

  Wu, Y F ^a   Kapolnek, D ^a   Ibbetson, J ^a   Zhang, N Q ^a   Parikh, P ^a   Keller, B P ^a   Mishra, U K ^a  

^a Nitres   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE;

OPTICAL STEPPER LITHOGRAPHY; POWER DENSITY; SCHOTTKY GATE BARRIER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033314092     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)