Influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 21-26

  Wickenden, A E ^a   Koleske, D D ^a   Henry, R L ^a   Gorman, R J ^a   Twigg, M E ^a   Fatemi, M ^a   Freitas Jr , J A ^a   Moore, W J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

RELATED ALLOYS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033887874     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0088-2     Document Type: Article

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