SiC microwave power devices

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 669-674

  Morvan, Erwan ^a   Noblanc, Olivier ^a   Dua, Christian ^a   Brylinski, Christian ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; MARKETING; MESFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

MICROWAVE POWER DEVICES; THERMAL MANAGEMENT;

MICROWAVE DEVICES;

EID: 4244118126     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.669     Document Type: Article

References (6)

1. S.T. Allen, W.L. Pribble, R.A. Sadler, T.S. Alcorn, Z. Ring, and J.W. Palmour (Cree), Progress in High Power SiC Microwave Mesfets, 1999 IEEE MTT-S Digest, pp 321.
2. R.J. Trew, The operation of Microwave Power Amplifiers Fabricated from Wide Bandgap Semiconductors, 1997 IEEE MTT-S Digest, pp 45.
3. C.E. Weitzel, Silicon Carbide High Frequency Devices, Mater. Sci. Forum 264-268 (1998), p. 907.
4. M. Roschke, F. Schwierz, G. Paasch, and D. Schipanski, Evaluating the Three Common SiC Polytypes for MESFET applications, Mater. Sci. Forum 264-268 (1998) p. 965.
5. O. Noblanc, C. Arnodo, E. Chartier, and C. Brylinski, Characterization of Power Mesfets on 4H-SiC Conductive and Semi-Insulating Wafers, Mater. Sci. Forum 949-952 (1998).
6. O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, Progress in the use of 4H-SiC semi-insulating substrates for microwave of power MESFETs, Materials Sci. and Eng. , B 61-62, (1999), p.339.