Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 1999, Pages 252-255

  Umana Membreno, G A ^a   Dell, J M ^a   Nener, B D ^a   Faraone, L ^a   Parish, G ^a   Wu, Y F ^a   Mishra, U K ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); OUTPUT-ADMITTANCE FREQUENCY DISPERSION;

ACTIVATION ENERGY; ELECTRIC ADMITTANCE; ELECTROMAGNETIC DISPERSION; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON;

FIELD EFFECT TRANSISTORS;

EID: 0032691274     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (12)