Suppression of instabilities in 4H-SiC microwave MESFETs

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2000, Pages 67-70

  Hilton, K P ^a   Uren, M J ^a   Hayes, D G ^a   Wilding, P J ^a   Smith, B H ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TRAPS; EPITAXIAL GROWTH; GATES (TRANSISTOR); MICROWAVE AMPLIFIERS; PASSIVATION; REACTIVE ION ETCHING; SILICON CARBIDE; THERMAL CONDUCTIVITY; THERMOOXIDATION;

TRAPPING INDUCED INSTABILITIES;

MESFET DEVICES;

EID: 0034442409     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)