Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 339-344

  Noblanc, O ^a   Arnodo, C ^a   Dua, C ^a   Chartier, E ^a   Brylinski, C ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MESFET DEVICES; SILICON CARBIDE; SUBSTRATES;

SEMI-INSULATING WAFERS;

SILICON WAFERS;

EID: 0032680907     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00529-7     Document Type: Article

References (5)

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2. Allen S.T., Sadler R.A., Alcorn T.S., Palmour J.W., Carter C.H. Jr. IEEE MTT-S Digest. 1997;57.
3. Sadler R.A., Allen S.T., Alcorn T.S., Pribble W.L., Sumakeris J., Palmour J.W. Proceedings of DRC, in press. 1998.
4. Noblanc O., Arnodo C., Chartier E., Brylinski C. Proceedings of ICSCRM 97 (Stockholm). 1997;949.
5. Noblanc O., Arnodo C., Chartier E., Brylinski C. Diam. Relat. Mater. 6(10):1997;1508.