Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

Electronics Letters

Volumn 35, Issue 12, 1999, Pages 1022-1024

  Kohn, E ^a   Daumiller, I ^a   Schmid, P ^a   Nguyen, N X ^a   Nguyen, C N ^b  

^a UNIVERSITY OF ULM   (Germany)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTROMAGNETIC DISPERSION; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

FREQUENCY DISPERSION;

FIELD EFFECT TRANSISTORS;

EID: 0032636127     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990697     Document Type: Article

References (6)

1. WU, Y.-F., et al.: 'High Al-content AlGaN/GaN MODEFT's for ultrahigh performance', IEEE Electron Device Lett., 1998, 19, pp. 50-53
2. CHEN, Q., et al.: 'High-Power Microwave 0.25μm gate doped-channel GaN/AlGaN Heterostructure field effect transistor', IEEE Electron Device Letters, 1998, 19, pp. 44-46
3. CHU, K.K., et al.: 'AlGaN/GaN piezoelectric HEMT's with submicron gates on sapphire', Proc. Electrochem. Soc., 1998, 12.
4. VETURY, R., et al.: 'Direct measurement of gate depletion in high breakdown (405V) AlGaN/GaN heterostrcuture field effect transistors'. IEDM 98, Tech. Dig., 1998, pp. 55-58
5. NGUYEN, N.X., et al.: 'Device characteristics of scaled GaN/AlGaN MODFET's', Electron. Lett., 1998, 34, pp. 811-812
6. LIPKA, K.-M., et al.: 'Low temperature grown GaAs lossy dielectric heterostructure FET'. Proc. IEEE/Cornell Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuit, 1995, Ithaca, NY, USA, pp. 542-551