SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1-xN

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 15-20

  Parish, G ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

RESIDUAL IMPURITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033897018     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0087-3     Document Type: Article

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