Epitaxially-grown GaN junction field effect transistors

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 507-511

  Zhang, L ^a   Lester, L F ^b   Baca, A G ^a   Shul, R J ^a   Chang, P C ^a   Willison, C G ^a   Mishra, U K ^c   Denbaars, S P ^c   Zolper, J C ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c Santa Barbara   (United States)

^d OFFICE OF NAVAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

CURRENT COLLAPSE; MOTT-GURNEY LAW;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0033878739     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824716     Document Type: Article

References (25)

1. V. A. Dmitriev et al, "Electric breakdown in GaN p-n junctions," Appl. Phys. Lett., vol. 68, pp. 229-231, Jan. 1996.
2. B. Gelmont, K. Kim, and M. S. Shur, "Monte carlo simulation of electron transport in gallium nitride," J. Appl. Phys., vol. 74, pp. 1818-1821, Aug. 1993.
3. S. N. Mohammad, A. Salvador, and H. Morkoç, "GaN and related materials," Proc. IEEE, vol. 83, p. 1306, 1995.
4. S. C. Binari et al., "Fabrication and characterization of GaN FETs," Solid-State Electron., vol. 41, pp. 1549-1554, Oct. 1997.
5. S. Yoshida and J. Suzuki, "Reliability of metal semiconductor field-effect transistor using GaN at high temperature," J. Appl. Phys., vol. 84, pp. 2940-2942, Sept. 1998.
6. U. K. Mishra et al, "GaN microwave electronics," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 756-760, June 1998.
7. M. A. Khan et al., "GaN based heterostructure for high power devices," Solid-State Electron., vol. 41, pp. 1555-1559, Oct. 1997.
8. Z. F. Fan et al., "Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors," Appl. Phys. Lett., vol. 69, pp. 1229-1231, Aug. 1996.
9. S. C. Binari et al, Proc. 1994 Int. Symp. Compound Semiconductors, San Diego, CA, Sept. 1994, pp. 492-496.
10. J. C. Zolper et al., "Ion-implanted GaN junction field effect transistor," Appl. Phys. Lett., vol. 68, pp. 2273-2275, Apr. 1996.
11. C. H. Chen et al., "High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors," Appl. Phys. Lett., vol. 73, pp. 3147-3149, Nov. 1998.
12. Y. F. Wu et al., "Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors," Appl. Phys. Lett., vol. 69, pp. 1438-1440, Sept. 1996.
13. Y. F. Wu et al, "Short-channel A10.5GaO.5N/GaN MODSFET's with power density >3 W/mm at 18 GHz," Electron. Lett., vol. 33, pp. 1742-1743, Sept. 1997.
14. L. F. Eastman, K. Chu, W. Schaff, M. Murphy, N. G. Weimann, and T. Eustis, "High frequency AlGaN/GaN MODFET's," MRS Internet J. Nitride Semicond. Res., vol. 2, 1997. art. 17.
15. O. Aktas étal., "High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors," Appl. Phys. Lett., vol. 69, pp. 3872-3874, Dec. 1996.
16. Y. F. Wu et al., "High power AlGaN/GaN HEMT's for microwave applications," Solid-State Electron., vol. 41, pp. 1569-1574, 1997.
17. S. C. Binari, J. M. Redwing, G. Keiner, and W. Kruppa, "AlGaN/GaN HEMT's grown on SiC substrate," Electron. Lett., vol. 33, pp. 242-243, Jan. 1997.
18. A. Osinski et al, "Schottky barrier photodetectors based on AlGaN," Appl. Phys. Lett., vol. 72, pp. 742-744, 1998.
19. J. M. Van Hove étal., "Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy," Appl. Phys. Lett., vol. 70, pp. 2282-2284, 1997.
20. C. Pernot, A. Hirano, H. Amano, and I. Akasaki, "Investigation of the leakage current in GaN p-n junctions," Jpn. J. Appl. Phys., vol. 37, pp. L1202-L1204, 1998.
21. M. Shur, Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1990.
22. Y F. Wu et al, "Measured microwave power performance of AlGaN/GaN MODFET," IEEE Electron Device Lett., vol. 17, pp. 45557, Sept. 1996.
23. O. Aktas et al, "Microwave performance of AlGaN/GaN inverted MODFET's," IEEE Electron Device Lett., vol. 18, pp. 293-295, June 1997.
24. P. J. Tasker and B. Hughes, "Importance of source and drain resistance to the maximum fT of millimeter-wave MODFET's," IEEE Electron Device Lett., vol. 10, pp. 291-293, July 1989.
25. A. S. Barker Jr. and M. Ilegems, "Infrared lattice vibrations and freeelectron dispersion in GaN," Phys. Rev., vol. B7, pp. 743-750, Jan. 1973.