Trap effects studies in GaN MESFETs by pulsed measurements

Electronics Letters

Volumn 35, Issue 16, 1999, Pages 1386-1388

  Trassaert, S ^a,b   Boudart, B ^a   Gaquiere C ^a   Theron D ^a   Crosnier, Y ^a   Huet, F ^a   Poisson, M A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; ENERGY GAP; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE;

ELECTRICAL TRAPS; GALLIUM NITRIDE; PULSED MEASUREMENTS;

MESFET DEVICES;

EID: 0032669293     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990887     Document Type: Article

References (6)

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2. BANDIC, Z.Z., PIQUETTE, E.G., BRIDGER, P.M., BEACH, R.A., KUECH, T.F., and MCGILL, T.C.: 'Nitride based high power devices: design and fabrication issues', Solid-State Electron., 1998, 42, (12), pp. 2289-2294
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6. HUANG, J.C., JACKSON, O.S., SHANFIELD, S., PLATZKER, A., SALEDAS, P.K., and WEICHERT, c.: 'An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for Xand K.U- band power applications', IEEE Trans., 1991, MTT-11, (5). DD. 752-759