GaN-Based FETs for microwave power amplification

IEICE Transactions on Electronics

Volumn E82-C, Issue 11, 1999, Pages 1895-1904

  Yi Feng, W U ^b   Keller, Bernd P ^a   Keller, Stacia ^b   Jane, J X U ^b   Thibeault, Brian J ^b   Denbaars, Steven P ^b   Mishra, Umesh K ^b  

^a University of California ^*  (United States)

^b University of California   (United States)

Author keywords

Amplifier; FET; Gan; HEMT; Microwave; Power device

Indexed keywords

EID: 33746403823     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. B. Gelmont, K. Kim, and M. Shur, "Monte Carlo simulation of electron transport in gallium nitride," J. Appl. Phys., vol.74, no.3, pp.1818-1821, 1 Aug. 1993.
2. M.A. Khan, J.N. Kuznia, A.R. Bhattarai, and D.T. Olson, "Metal semiconductor field effect transistor based on single crystal GaN," Appl. Phys. Lett., vol.62, no.15, pp.1786-1788, 12 April 1993.
3. M.A. Khan, J.N. Kuznia, D.T. Oison, W.J. Schaff, J.W. Burm, and M.S. Shur. "Microwave performance of a 0.25/im gate AlGaN/GaN heterostructure field effect transistor," Appl. Phys. Lett., vol.65, no.9, pp.1121-1123, 29 Aug. 1994.
4. S.C. Binari, L.B. Rowland, W. Kruppa, G. Keiner, K. Doverspike, and D.K. Gaskill, "Microwave performance of GaN MESFETs," Electron. Lett., vol.30, no.15, pp.1248-1249, July 1994.
5. M.E. Lin, Z. Ma, F.Y. Huang, Z. Fan, L.H. Allen, and H. Morkoc, "Low resistance ohmic contact to n-GaN," Appl. Phys. Lett., vol.64, pp.1003-1005, 1994.
6. A. Ozgur, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S.N. Mohammad, B. Sverdlov, and H. Morkoc, "High transconductancc-normally-off GaN MODFETs," Electron. Lett., vol.31, no.16, pp.1389-1390, Aug. 1995.
7. Z. Fan, S.N. Mohammad, W. Kirn, O. Aktas, A.E. Botchkarev, and H. Morkoc, "Very low resistance ohmic contact to n-GaN," Appl. Phys. Lett., vol.68, no.12, pp.1672-1674, 18 March 199G.
8. M.A. Khan, Q. Chen, J.W. Yang, M.S. Shur, B.T. Dermott, and J.A. Higgins, "Microwave operation of GaN/AlGaN doped channel heterostructure field effect transistors," IEEE Electron Device Lett., vol.32, no.4, pp.367-358, Feb. 1996.
9. B.P. Keller, S. Keller, D. Kapolnek, W.-N. Jian, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J.S. Speck, U.K. Mishra, and S.P. Denbaars, "Metal-organic chemical vapor deposition growth of high optical quality and high mobility GaN," Journal of Electron Material, vol.24, no.ll, pp.1707-1709, 1995.
10. Y.-F. Wu, B.P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S.P. Denbaars, and U.K. Mishra, "Very high breakdown voltage and large transconductance realized on AlGaN/GaN heterostructure field effect transistors," Appl. Phys. Lett., Sept. 2, 1996.
11. Y.-F. Wu, B.P. Keller, S. Keller, D. Kapolnek, S.P. Denbaars, and U.K. Mishra, "Measured power performance of AlGaN/GaN MODFETs," IEEE Electron Device Lett., vol.17, pp.455-457, Sept. 1996.
12. O. Akatas, Z.F. Fan, A. Botchkarev, S.N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, "Microwave performance of AlGaN/GaN inverted MODFET," IEEE Electron Device Lett., vol.18, no.6, pp.293-295, June 1997.
13. Y.-F. Wu, S. Keller, P. Kozodoy, B.P. Keller, P. Parikh, D. Kapolnek, S.P. Denbaars, and U.K. Mishra, "Bias dependent microwave performance of AlGaN/GaN MODFETs up to 100V," IEEE Electron Device Lett., vol.18, no.6, pp.290-292, June 1997.
14. Y.-F. Wu, B.P. Keller, S. Keller, N.X. Nguyen, M. Le, C. Nguyen, T.J. Jenkins, L.T. Kehias, S.P. Denbaars, and U.K. Mishra, "Short channel AlGaN/GaN MODFETs with 50-GHz }T and 1.7-W/mm output-power at 10 GHz," IEEE Electron Device Lett., vol.18, no.9, pp.438-440, Sept. 1997.
15. Y.-F. Wu, B.P. Keller, P. Fini, S. Keller, S.P. Denbaars, and U.K. Mishra, "High Al-content AlGaN/GaN MODFETs for ultra-high performance," IEEE Electron Device Lett., vol.19, no.2, pp.50-53, Feb. 1998.
16. Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. Denbaars, and U.K. Mishra, "Short-Channel Alo.sGao.sN/GaN MODFETs with power density > 3 W/inm at 18 GHz," Electron. Lett., no.20, vol.33, pp. 1742-1743, Sept. 25, 1997.
17. S. Sriram, T.J. Smith, L.B. Rowland, A.A. Burk, Jr., G. Augustine, V. Balakrishna, U.M. Hobgood, and C.D. Brandt, "High power operation of 411-SiC MESFETs at 10 GHz," presented in the 55th Device Research Conference, Colorado state University, 23-25 June 1997.
18. Z. Fan, S.N. Mohammad, O. Atkas, A.E. Botchkarev, A. Salvador, and H. Morkoc, "Suppression of leakage current and their performance of AlGaN/GaN MODFETs," Appl. Phys. Lett., vol.69, no.9, pp.1229-1231, Aug. 1996.
19. F. Ren, J.R. Lothian, Y.K. Chen, R.F.Jr., Karlicek, L. Tran, M. Schurmann, R.A. Stall, J.W. Lee, and S.J. Pearton, "Recessed gate GaN field effect transistor," Solid-State Electron., vol.41, no.ll, pp.1819-1820, Nov. 1997.
20. J. Burrn, W.J. Schaff, G.H. Martin, and L.F. Eastman, "Recessed gate GaN MODFETs," (Topical Workshop on IIIV Nitrides, Nagoya, Japan, 21-23 Sept. 1995). Solid-State Electron., vol.41, no.2, pp.247-250, Feb. 1997.
21. G.J. Sullivan, M.Y. Chen, J.A. Higgins, J.W. Yang, Q. Chen, R.L. Pierson, and B.T. McDermott, "High-power 10-GHz operation of AlGaN HFET's on insulating SiC," IEEE Electron Device Lett., vol.19, pp.198-200, June 1998.
22. S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Alien, and J.W. Palmour, "High power microwave GaN/AlGaN HEMTs on silicon carbide," IEEE Electron Device Lett., vol.20, no.4, pp.161-163, April 1999.
23. B.J. Thibeault, B.P. Keller, Y.-F. Wu, P. Fini, U.K. Mishra, C. Nguyen, N.X. Nguyen, and M. Le, "High performance and large area flip-chip bonded AlGaN/GaN MODFETs," IEDM, Dec. 1997.
24. J.J. Xu, Y.-F. Wu, S. Keller, G. Parish, S. Heikman, B.T. Thibeault, U.K. Mishra, and R.A. York, "GaNbased 1-8GHz amplifier using flip-chip bonding," IEEE Microwave and Guided Wave Lett., vol.9, no.7, pp.277-279, July 1999.
25. Y.-F. Wu, R.A. York, S. Keller, B.P. Keller, and U.K. Mishra, "3-9 GHz GaN-based microwave power amplifiers with L-C-R broadband matching," IEEE Microwave and Guided Wave Lett., vol.9, no.8, pp.314-316, Aug. 1999.