Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 385-388

  Chumbes, E M ^a   Smart, J A ^a   Prunty, T ^a   Shealy, J R ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVES; PASSIVATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDES;

MISFET DEVICES;

EID: 0034454731     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
3. GaN-based FETs for microwave power amplifications
4. High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high power performance
5. Microwave performance of AlGaN/GaN metal-insulator semiconductor field effect transistors
6. Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors
7. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
8. LPCVD-type plasma-enhanced deposition system
9. AlGaN/GaN piezoelectric HEMTs with submicron gates on sapphire
10. Etch processing of III-V nitrides
11. 2/Ar high-density plasma damage in GaN schottky diodes
12. Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors