Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied Surface Science

Volumn 314, Issue , 2014, Pages 546-551

  Greco, Giuseppe ^a   Iucolano, Ferdinando ^b   Bongiorno, Corrado ^a   Giannazzo, Filippo ^a   Krysko, Marcin ^c   Leszczynski, Mike ^c   Roccaforte, Fabrizio ^a  

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

AlGaN GaN; Ohmic contact; Ti Al; V defects

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ATOMIC FORCE MICROSCOPY; DEFECT DENSITY; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; OHMIC CONTACTS; SEMICONDUCTOR ALLOYS; SURFACE DEFECTS; TEMPERATURE DISTRIBUTION; VANADIUM ALLOYS;

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL AND STRUCTURAL PROPERTIES; SPECIFIC CONTACT RESISTANCES; SURFACES AND INTERFACES; TEMPERATURE DEPENDENCE; V-DEFECTS;

ALUMINUM ALLOYS;

EID: 84906693630     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.07.018     Document Type: Article

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