Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Ha, Jun Seok ^a   Lee, Hyo Jong ^a   Lee, Seog Woo ^a   Lee, Hyun Jae ^a   Lee, Sang Hyun ^a   Goto, Hiroki ^a   Cho, Meoung Whan ^a   Yao, Takafumi ^a   Hong, Soon Ku ^b   Toba, Ryuichi ^c   Lee, Jae Wook ^d   Lee, Jeong Yong ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b Chungnam National University   (South Korea)

^c Dowa Holdings Co Ltd   (Japan)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE;

NANOISLANDS; SAPPHIRE TEMPLATES;

METALLIC FILMS;

EID: 40549114606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2890488     Document Type: Article

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