Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 49-52

  De Jaeger, B ^a   Van Hove, M ^a   Wellekens, D ^a   Kang, X ^a   Liang, H ^a   Mannaert, G ^a   Geens, K ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

Author keywords

200 mm; AlGaN GaN HEMT; Au free; CMOS compatible; e mode; GaN on Si

Indexed keywords

200 MM; ALGAN/GAN HEMTS; AU-FREE; CMOS COMPATIBLE; E-MODE; GAN-ON-SI;

SILICON; SILICON WAFERS;

GALLIUM NITRIDE;

EID: 84864754611     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229020     Document Type: Conference Paper

References (7)

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7. M. Van Hove et al., "CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon", IEEE Electron Device Lett., Vol. 33, No. 04, April 2012 (in press).