Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGan/ Gan heterostructure field-effect transistor field-effect transistor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 322-326

  Kim, Ki Hong ^a   Jeon, Chang Min ^b   Oh, Sang Ho ^b   Lee, Jong Lam ^b   Park, Chan Gyung ^b   Lee, Jung Hee ^c   Lee, Kyu Seok ^d   Koo, Yang Mo ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Kyungpook National University   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ANNEALING; CURRENT DENSITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GOLD; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; MORPHOLOGY; NICKEL; SYNCHROTRON RADIATION; TANTALUM; TITANIUM; X RAY DIFFRACTION ANALYSIS;

INTERFACIAL LAYERS; WIDE BAND-GAP SEMICONDUCTORS;

OHMIC CONTACTS;

EID: 29044436362     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1856479     Document Type: Article

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