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Volumn 91, Issue 11, 2002, Pages 9214-9217
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Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
AS ANNEALING;
ATOMIC COMPOSITIONS;
IN-SITU;
N VACANCY;
OHMIC CONTACT FORMATION;
SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;
ELECTRIC CONTACTORS;
GALLIUM NITRIDE;
OHMIC CONTACTS;
TITANIUM;
TITANIUM NITRIDE;
WORK FUNCTION;
SYNCHROTRON RADIATION;
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EID: 0036607903
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1476085 Document Type: Article |
Times cited : (56)
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References (11)
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