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Volumn 91, Issue 11, 2002, Pages 9214-9217

Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

AS ANNEALING; ATOMIC COMPOSITIONS; IN-SITU; N VACANCY; OHMIC CONTACT FORMATION; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

EID: 0036607903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476085     Document Type: Article
Times cited : (56)

References (11)
  • 7
    • 0000330622 scopus 로고    scopus 로고
    • jaJAPIAU 0021-8979
    • C. I. Wu and A. Kahn, J. Appl. Phys. 83, 4249 (1998). jap JAPIAU 0021-8979
    • (1998) J. Appl. Phys. , vol.83 , pp. 4249
    • Wu, C.I.1    Kahn, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.