Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Malmros, A ^a   Blanck, H ^b   Rorsman, N ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; ANNEAL TEMPERATURES; CONTACT MECHANISM; CROSS SECTION; ELECTRICAL PROPERTY; EPITAXIAL STRUCTURE; GAN HEMTS; HETEROSTRUCTURES; LOW TEMPERATURES; METALLIZATIONS; OPTIMUM TEMPERATURE; PROCESS WINDOW; STORAGE TESTS; TEM IMAGES; THERMAL STABILITY;

ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLIZING; MICROSTRUCTURE; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79953864316     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075006     Document Type: Article

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