SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 3, 2013, Pages 439-446

Nanoscale probing of interfaces in GaN for devices applications

a CNR IMM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; NANOTECHNOLOGY; NITRIDES; OHMIC CONTACTS; SCANNING PROBE MICROSCOPY; SILICON CARBIDE;

GALLIUM NITRIDE (GAN); HIGH-RESOLUTION TECHNIQUES; MACROSCOPIC MEASUREMENTS; NANO SCALE; SCHOTTKY;

GALLIUM NITRIDE;

EID: 84883869750 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/05003.0439ecst Document Type: Conference Paper

Times cited : (2)

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