Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation

Journal of Crystal Growth

Volumn 353, Issue 1, 2012, Pages 88-94

  Cheng, Kai ^a   Leys, M ^a   Degroote, S ^b   Bender, H ^a   Favia, P ^a   Borghs, G ^a   Germain, M ^b  

^a IMEC   (Belgium)

^b EPIGAN   (Belgium)

Author keywords

A1. Morphological stability; A3. MOVPE; B1. Nitrides; B3. HEMT

Indexed keywords

AFM; ANNEALING TIME; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION GLIDE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); IN-SITU; MORPHOLOGICAL STABILITY; PROLONGED ANNEALING; RELAXATION MECHANISM; SIDE WALLS; SURFACE INSTABILITY; TAPPING-MODE ATOMIC FORCE MICROSCOPY; V GROOVES; V-GROOVE;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 84861677884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.05.002     Document Type: Article

References (22)

1. S. Nakamura, and G. Fasol 1997 The blue diode laser - GaN light emitters and lasers, Springer-Verlag Berlin
2. O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, G. Weimann, K. Chu, M. Murphy, A. Seirakowsky, W.J. Schlaff, L.F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann Journal of Applied Physics 87 2000 334
3. J.A. del Alamo, and J. Joh Microelectronics Reliability 49 2009 1200
4. J.W. Matthews, and A.E. Blakeslee Journal of Crystal Growth 27 1974 118
5. M.A. Grinfield Soviet Physics Doklady 31 1987 831
6. D.J. Srolovitz Acta Metallurgica 37 1989 621
7. J. Grilhe Acta Metallurgica et Materialia 41 1993 909
8. H. Gao, and D.H. Nix Annual Review of Materials Science 29 1999 173
9. Ch. Chiu, and H. Gao International Journal of Solids and Structures 30 1993 2983
10. W.H. Yang, and D.J. Srolovitz Physical Review Letters 71 1993 1593
11. D.E. Jesson, S.J. Pennycook, J.M. Baribeau, and D.C. Houghton Physical Review Letters 71 1993 1744
12. J. Tersoff, Y.H. Phang, and M.G. Zhenyu Zhang Lagally Physical Review Letters 75 1995 2730
13. Y.H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman, S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortran, S. Schuppler, M.A. Marcus, and P.H. Citrin Physical Review Letters 73 1994 3006
14. J. Derluyn, S. Boeykens, K. Cheng, R. Vandersmissen, J. Das, W. Ruythooren, S. Degroote, M.R. Leys, M. Germain, and G. Borghs Journal of Applied Physics 98 2005 054501
15. M. Kai Cheng, J. Leys, S. Derluyn, D.P. Degroote, A. Xiao, S. Lorenz, M. Boeykens, Germain, and G. Borghs Journal of Crystal Growth 298 2007 822
16. S.R. Lee, D.D. Koleske, K.C. Cross, J.A. Floro, K.E. Waldrip, A.T. Wise, and S. Mahajan Applied Physics Letters 85 2004 6164
17. J.A. Floro, D.M. Follstaedt, P. Provencio, S.J. Hearne, and S.R. Lee Journal of Applied Physics 96 2004 7087
18. P. Vennegues, Z. Bougria, J.M. Bethoux, M. Azizie, and O. Tottereau Journal of Applied Physics 97 2005 024912
19. T. Takizawa, S. Nakazawa, and T. Ueda Journal of Electronic Materials 37 2008 628
20. W.K. Burton, N. Cabrera, and F.C. Frank Philosophical Transactions of the Royal Society of London A243 1951 299
21. B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. Denbaars, and J.S. Speck Journal of Applied Physics 85 1999 6470
22. J.E. Northrup, and J. Neugebauer Physical Review B 60 1999 R8473