Direct observation of localized high current densities in GaN films

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2367-2369

  Braze, E G ^a,b   Chin, M A ^a   Narayanamurti, V ^a,c  

^a University of California   (United States)

^b Digital Instruments   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; ELECTRON TRAPS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); GALLIUM NITRIDE; THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0032614963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123853     Document Type: Article

References (18)

1. U. K. Mishra, Y.-F. Wu, B. P. Keller, S. Keller, and S. P. DenBaars, in Physics of Semiconductor Devices, edited by V. Kumar and S. K. Agarwal (Narosa, New Delhi 1998), and references therein.
2. U. K. Mishra, Y.-F. Wu, B. P. Keller, S. Keller, and S. P. DenBaars, IEEE Trans. Microwave Theory Tech. 46, 756 (1998).
3. Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 19, 50 (1998).
4. S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).
5. J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, M. Elstner, Th. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon, Phys. Rev. Lett. 79, 3672 (1997).
6. A. F. Wright, Sandia National Laboratories (unpublished).
7. F. A. Ponce, D. P. Bour, W. Gotz, and P. J. Wright, Appl. Phys. Lett. 68, 57 (1996).
8. S. Christiansen, M. Albrecht, W. Dorsch, H. P. Strunk, C. Zanotti-Fregonara, G. Salviati, A. Pelzmann, M. Mayer, M. Kamp, and K. J. Ebeling, MRS Internet J. Nitride Semicond. Res. 1, 19 (1997).
9. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
10. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano, and S. Sakai, Jpn. J. Appl. Phys., Part 2 37, L398 (1998).
11. N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1997).
12. P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. K. Mishra, V. Narayanamurti, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 72, 2247 (1998).
13. B. P. Keller, S. Keller, D. Kapolnek, M. Kato, H. Masui, S. Imagi, U. K. Mishra, and S. P. DenBaars, Electron. Lett. 31, 1102 (1995).
14. S. P. DenBaars and S. Keller, in Semiconductors and Semimetals edited by R. K. Willardson and A. C. Beer (Academic, New York 1997), Vol. 50.
15. W. J. Kaiser and L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988); L. D. Bell and W. J. Kaiser, ibid. 61, 2368 (1988).
16. W. J. Kaiser and L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988); L. D. Bell and W. J. Kaiser, ibid. 61, 2368 (1988).
17. M. Prietsch, Phys. Rep. 253, 163 (1995), and references cited therein.
18. E. G. Brazel, M. A. Chin, V. Narayanamurti, D. Kapolnek, E. J. Tarsa, and S. P. DenBaars, Appl. Phys. Lett. 70, 330 (1997).