Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4564-4566

  Hashizume, Tamotsu ^a   Nakasaki, Ryusuke ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTION BAND EDGE; DISCRETE SURFACES; METAL-INSULATOR-SEMICONDUCTORS; NITROGEN ATOM; SURFACE STATE; SURFACE STATE DENSITY; X-RAY PHOTOEMISSIONS;

DESORPTION; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITROGEN; SURFACE DEFECTS; VACANCIES;

NITROGEN PLASMA;

EID: 79955989017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1485309     Document Type: Article

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