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Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 583-586

Low resistance Ti/Al/Mo/Au Ohmic contacts for AlGaN/GaN heterostructure field effect transistors

(4) Selvanathan, D a Zhou, L a Kumar, V a Adesida, I a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BAND STRUCTURE; ELECTRIC RESISTANCE; FERMI LEVEL; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GOLD; HETEROJUNCTIONS; MOLYBDENUM; REACTIVE ION ETCHING; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM GALLIUM NITRIDE; CONDUCTION BAND; CONTACT RESISTANCE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; SPECIFIC CONTACT RESISTIVITY;

OHMIC CONTACTS;

EID: 0036960172 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200212)194:2<583::AID-PSSA583>3.0.CO;2-3 Document Type: Article

Times cited : (56)

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