Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied Physics Letters

Volumn 103, Issue 20, 2013, Pages

  Iucolano, Ferdinando ^a   Greco, Giuseppe ^b   Roccaforte, Fabrizio ^b  

^a STMICROELECTRONICS   (Italy)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; ELECTRICAL BEHAVIORS; MICROSTRUCTURAL ANALYSIS; SPECIFIC CONTACT RESISTANCES; STRUCTURAL AND ELECTRICAL PROPERTIES; TEMPERATURE BEHAVIOR; TEMPERATURE DEPENDENT; THERMIONIC FIELD EMISSION;

ELECTRIC CONTACTORS; GALLIUM NITRIDE; OHMIC CONTACTS; TWO DIMENSIONAL ELECTRON GAS;

ELECTRIC PROPERTIES;

EID: 84889688620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4828839     Document Type: Article

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