Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy

Journal of Electron Microscopy

Volumn 50, Issue 6, 2001, Pages 489-495

  Bright, Alexander N ^a   Sharma, Nikhil ^a   Humphreys, Colin J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Contact microstructures; Energy filtered TEM; Gallium nitride; Multi quantum wells; Ohmic contacts; V defects

Indexed keywords

ARTICLE;

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LIGHT EMISSION; MICROSTRUCTURE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HETEROSTRUCTURES; BRIGHT-FIELDS; CONTACT MICROSTRUCTURE; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; HIGH-POWER TRANSISTORS; INGAN/GAN MULTI-QUANTUM WELL; LIGHT-EMITTING STRUCTURES; MICROSCOPY TECHNIQUE; MULTIQUANTUM-WELL (MQW); V-DEFECTS;

OHMIC CONTACTS;

EID: 0035724392     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/50.6.489     Document Type: Conference Paper

References (23)

1. Microstructure of Ti/A1 and Ti/Al/Ni/Au Ohmic contacts for n-GaN
2. Long-term thermal stability of Ti/Al/Pt/ Au Ohmic contacts to n-type GaN
3. Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN
4. Very low resistance multilayer ohmic contact to n-GaN
5. Electric and morphology studies of ohmic contacts on AlGaN/GaN
6. Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the 'advancing' Al/Ti metallization
7. Microstructure of Ti/A1 ohmic contacts for n-AlGaN
8. Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN
9. About the use of electron energy-loss spectroscopy for chemical mapping of thin foils with high spatial resolution
10. Image spectroscopy I. The advantage of increased spectral information for compositional EFTEM analysis
11. Quantification of high-resolution lattice images and electron holograms
12. UV, blue and green InGaN quantum well structure LEDs
13. TEM assessment of GaN epitaxial growth
14. Observation of thermally activated conduction at a GaN-sapphire interface
15. Formation mechanism of nanotubes in GaN
16. Study of open-core dislocations in GaN films on (0001) sapphire
17. Pit formation in GaInN quantum wells
18. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
19. Indium-induced changes in GaN (0001) surface morphology
20. Imaging of nanometersized precipitates in solids by electron spectroscopic imaging
21. The quantitative analysis of thin specimens
22. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth