Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Yoo, Hyobin ^a   Chung, Kunook ^a   In Park, Suk ^a   Kim, Miyoung ^a   Yi, Gyu Chul ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EBSD ANALYSIS; ELECTRON BACK SCATTER DIFFRACTION; GAN FILM; GAN THIN FILMS; GRAPHENE LAYERS; LOW ANGLE GRAIN BOUNDARIES; MICROSTRUCTURAL DEFECTS; PREFERRED ORIENTATIONS; TEM ANALYSIS; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY (TEM);

CHEMICAL VAPOR DEPOSITION; DEFECTS; GALLIUM NITRIDE; GRAIN BOUNDARIES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GRAPHENE;

EID: 84874067578     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790385     Document Type: Article

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