Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

Journal of Applied Physics

Volumn 115, Issue 5, 2014, Pages

  Niquet, Yann Michel ^a   Nguyen, Viet Hung ^a   Triozon, François ^b   Duchemin, Ivan ^a   Nier, Olivier ^c   Rideau, Denis ^c  

^a UNIV GRENOBLE ALPES   (France)

^b CEA GRENOBLE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; HALL MOBILITY; PHONONS; QUANTUM CHEMISTRY; SURFACE ROUGHNESS;

CARBON NANOSTRUCTURES; INTERFERENCE EFFECTS; NON-EQUILIBRIUM GREEN'S FUNCTION; REMOTE COULOMB SCATTERINGS; SCATTERING MECHANISMS; SEMICLASSICAL APPROACHES; SEMICONDUCTOR NANOWIRE; SPATIAL CORRELATIONS;

HOLE MOBILITY;

EID: 84903750423     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4864376     Document Type: Article

References (75)

1. T. Ytterdal, C. Y. Hua, and T. A. Fjeldly, Device Modeling for Analog and RF CMOS Circuit Design (Wiley, Chichester, 2003).
2. See http://www.itrs.net/ for the international technology roadmap for semiconductors (ITRS).
3. O. Faynot, F. Andrieu, O. Weber, C. Fenouillet-Beranger, P. Perreau, J. Mazurier, T. Benoist, O. Rozeau, T. Poiroux, M. Vinet, L. Grenouillet, J.-P. Noel, N. Posseme, S. Barnola, F. Martin, C. Lapeyre, M. Casse, X. Garros, M. A. Jaud, O. Thomas, G. Cibrario, L. Tosti, L. Brevard, C. Tabone, P. Gaud, S. Barraud, T. Ernst, and S. Deleonibus, IEEE Int. Electron Devices Meet. 2010, 3-2 1-3 2-4. 10.1109/IEDM.2010.5703287
4. N. Planes, O. Weber, V. Barral, S. Haendler, D. Noblet, D. Croain, M. Bocat, P. Sassoulas, X. Federspiel, A. Cros, A. Bajolet, E. Richard, B. Dumont, P. Perreau, D. Petit, D. Golanski, C. Fenouillet-Beranger, N. Guillot, M. Rafik, V. Huard, S. Puget, X. Montagner, M. A. Jaud, O. Rozeau, O. Saxod, F. Wacquant, F. Monsieur, D. Barge, L. Pinzelli, M. Mellier, F. Boeuf, F. Arnaud, and M. Haond, VLSI Technol. Symp. 2012, 133-134. 10.1109/VLSIT.2012.6242497
5. J.-P. Colinge, Solid-State Electron. 48, 897 (2004). 10.1016/j.sse.2003. 12.020
6. S. Barraud, R. Coquand, M. Casse, M. Koyama, J. Hartmann, V. Maffini-Alvaro, C. Comboroure, C. Vizioz, F. Aussenac, O. Faynot, and T. Poiroux, IEEE Electron Device Lett. 33, 1526 (2012). 10.1109/LED.2012.2212691
7. S. Jin, M. V. Fischetti, and T.-w. Tang, J. Appl. Phys. 102, 083715 (2007). 10.1063/1.2802586
8. S. Poli, M. Pala, T. Poiroux, S. Deleonibus, and G. Baccarani, IEEE Trans. Electron Devices 55, 2968 (2008). 10.1109/TED.2008.2005164
9. C. Buran, M. Pala, M. Bescond, M. Dubois, and M. Mouis, IEEE Trans. Electron Devices 56, 2186 (2009). 10.1109/TED.2009.2028382
10. S. Poli and M. Pala, IEEE Electron Device Lett. 30, 1212 (2009). 10.1109/LED.2009.2031418
11. S. Poli, M. Pala, and T. Poiroux, IEEE Trans. Electron Devices 56, 1191 (2009). 10.1109/TED.2009.2019380
12. M. P. Persson, H. Mera, Y.-M. Niquet, C. Delerue, and M. Diarra, Phys. Rev. B 82, 115318 (2010). 10.1103/PhysRevB.82.115318
13. M. Aldegunde, A. Martinez, and A. Asenov, J. Appl. Phys. 110, 094518 (2011). 10.1063/1.3658856
14. M. Luisier, Appl. Phys. Lett. 98, 032111 (2011). 10.1063/1.3540689
15. V.-H. Nguyen, F. Triozon, F. Bonnet, and Y.-M. Niquet, IEEE Trans. Electron Devices 60, 1506 (2013). 10.1109/TED.2013.2248734
16. J. H. Oh, S.-H. Lee, and M. Shin, J. Appl. Phys. 113, 233706 (2013). 10.1063/1.4811534
17. N. Neophytou and H. Kosina, Phys. Rev. B 84, 085313 (2011). 10.1103/PhysRevB.84.085313
18. Y.-M. Niquet, C. Delerue, D. Rideau, and B. Videau, IEEE Trans. Electron Devices 59, 1480 (2012). 10.1109/TED.2012.2187788
19. R. Kubo, J. Phys. Soc. Jpn. 12, 570 (1957). 10.1143/JPSJ.12.570
20. D. A. Greenwood, Proc. Phys. Soc. 71, 585 (1958). 10.1088/0370-1328/71/4/ 306
21. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983). 10.1103/RevModPhys.55.645
22. S.-M. Hong and C. Jungemann, J. Comput. Electron. 8, 225 (2009). 10.1007/s10825-009-0294-y
23. M. P. Anantram, M. S. Lundstrom, and D. E. Nikonov, Proc. IEEE 96, 1511 (2008). 10.1109/JPROC.2008.927355
24. M. Luisier, A. Schenk, W. Fichtner, and G. Klimeck, Phys. Rev. B 74, 205323 (2006). 10.1103/PhysRevB.74.205323
25. S. Li, S. Ahmed, and E. Darve, J. Comput. Electron. 6, 187 (2007). 10.1007/s10825-006-0112-8
26. K. Kazymyrenko and X. Waintal, Phys. Rev. B 77, 115119 (2008). 10.1103/PhysRevB.77.115119
27. S. Cauley, M. Luisier, V. Balakrishnan, G. Klimeck, and C.-K. Koh, J. Appl. Phys. 110, 043713 (2011). 10.1063/1.3624612
28. M. Luisier and G. Klimeck, in International Conference for High Performance Computing, Networking, Storage and Analysis (2008), pp. 1-10.
29. M. Luisier and G. Klimeck, Phys. Rev. B 80, 155430 (2009). 10.1103/PhysRevB.80.155430
30. N. Cavassilas, F. Michelini, and M. Bescond, J. Appl. Phys. 109, 073706 (2011). 10.1063/1.3556457
31. N. Dehdashti Akhavan, I. Ferain, R. Yu, P. Razavi, and J.-P. Colinge, J. Comput. Electron. 11, 249 (2012). 10.1007/s10825-012-0411-1
32. M. Frey, A. Esposito, and A. Schenk, J. Appl. Phys. 109, 083707 (2011). 10.1063/1.3573487
33. S. Datta, F. Assad, and M. Lundstrom, Superlattices Microstruct. 23, 771 (1998). 10.1006/spmi.1997.0563
34. M. Shur, IEEE Electron Device Lett. 23, 511 (2002). 10.1109/LED.2002. 802679
35. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures, Monographies de physique (Les Éditions de Physique, 1988).
36. J. Wang, E. Polizzi, and M. Lundstrom, J. Appl. Phys. 96, 2192 (2004). 10.1063/1.1769089
37. S. Jin, Y. J. Park, and H. S. Min, J. Appl. Phys. 99, 123719 (2006). 10.1063/1.2206885
38. D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 50, 2445 (2003). 10.1109/TED.2003.819256
39. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996). 10.1063/1.363052
40. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, Phys. Rev. B 32, 8171 (1985). 10.1103/PhysRevB.32.8171
41. S. Jin, M. Fischetti, and T.-W. Tang, IEEE Trans. Electron Devices 54, 2191 (2007) 10.1109/TED.2007.902712.
42. See http://www.synopsys.com/Tools/TCAD/DeviceSimulation/Pages/ SentaurusDevice.aspx for Sentaurus device.
43. D. Rideau, Y. M. Niquet, O. Nier, P. Palestri, D. Esseni, V. H. Nguyen, F. Triozon, I. Duchemin, D. Garetto, L. Smith, L. Silvestri, F. Nallet, C. Tavernier, and H. Jaouen, in International Workshop on Computational Electronics (IWCE) (2013), see also http://in4.iue.tuwien.ac.at/pdfs/iwce/iwce16-2013/D2. pdf.
44. L. Lucci, P. Palestri, D. Esseni, L. Bergagnini, and L. Selmi, IEEE Trans. Electron Devices 54, 1156 (2007). 10.1109/TED.2007.894606
45. P. Toniutti, D. Esseni, and P. Palestri, IEEE Trans. Electron Devices 57, 3074 (2010). 10.1109/TED.2010.2068990
46. B. Kramer and A. MacKinnon, Rep. Prog. Phys. 56, 1469 (1993). 10.1088/0034-4885/56/12/001
47. W. Walukiewicz, L. Lagowski, L. Jastrzebski, M. Lichtensteiger, and H. C. Gatos, J. Appl. Phys. 50, 899 (1979). 10.1063/1.326008
48. F. Stern, Phys. Rev. Lett. 44, 1469 (1980). 10.1103/PhysRevLett.44.1469
49. Y. Takeda and T. Pearsall, Electron. Lett. 17, 573 (1981). 10.1049/el:19810402
50. A. K. Saxena and M. A. L. Mudares, J. Appl. Phys. 58, 2795 (1985). 10.1063/1.335876
51. M. V. Fischetti, F. Gamiz, and W. Hansch, J. Appl. Phys. 92, 7320 (2002). 10.1063/1.1521796
52. D. Esseni and F. Driussi, IEEE Trans. Electron Devices 58, 2415 (2011). 10.1109/TED.2011.2151863
53. M.-J. Chen, W.-H. Lee, and Y.-H. Huang, IEEE Trans. Electron Devices 60, 753 (2013). 10.1109/TED.2012.2233202
54. F. Gamiz, J. B. Roldan, J. E. Carceller, and P. Cartujo, Appl. Phys. Lett. 82, 3251 (2003). 10.1063/1.1572967
55. D. Esseni and A. Abramo, IEEE Trans. Electron Devices 50, 1665 (2003). 10.1109/TED.2003.814973
56. M. Casse, L. Thevenod, B. Guillaumot, L. Tosti, F. Martin, J. Mitard, O. Weber, F. Andrieu, T. Ernst, G. Reimbold, T. Billon, M. Mouis, and F. Boulanger, IEEE Trans. Electron Devices 53, 759 (2006). 10.1109/TED.2006.870888
57. S. Barraud, O. Bonno, and M. Casse, J. Appl. Phys. 104, 073725 (2008). 10.1063/1.2968217
58. P. Toniutti, P. Palestri, D. Esseni, F. Driussi, M. D. Michielis, and L. Selmi, J. Appl. Phys. 112, 034502 (2012). 10.1063/1.4737781
59. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 90, 4587 (2001). 10.1063/1.1405826
60. A. Asenov, A. R. Brown, G. Roy, B. Cheng, C. Alexander, C. Riddet, U. Kovac, A. Martinez, N. Seoane, and S. Roy, J. Comput. Electron. 8, 349 (2009). 10.1007/s10825-009-0292-0
61. G. D. Mahan, Many-Particle Physics, 2nd ed. (Plenum, New York, NY, 1993).
62. K. Uchida, J. Koga, R. Ohba, T. Numata, and S.-I. Takagi, Tech. Dig. -Int. Electron Devices Meet. 2001, 29-4 1-29 4-4. 10.1109/IEDM.2001.979588
63. K. Uchida and S.-i. Takagi, Appl. Phys. Lett. 82, 2916 (2003). 10.1063/1.1571227
64. J. C. Hensel, H. Hasegawa, and M. Nakayama, Phys. Rev. 138, A225 (1965). 10.1103/PhysRev.138.A225
65. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, and S. Selberherr, Solid-State Electron. 52, 1563 (2008). 10.1016/j.sse.2008.06.019
66. E. M. Conwell and M. O. Vassell, Phys. Rev. 166, 797 (1968). 10.1103/PhysRev.166.797
67. See http://www-hpc.cea.fr/en/complexe/tgcc-curie.htm for information about the TGCC and Curie machine.
68. See http://ciment.ujf-grenoble.fr for information about the CIMENT infrastructure and Froogy machine.
69. A. Svizhenko and M. P. Anantram, IEEE Trans. Electron Devices 50, 1459 (2003). 10.1109/TED.2003.813503
70. Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 50, 1914 (2003) 10.1109/TED.2003.816524.
71. A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal, J. Appl. Phys. 91, 2343 (2002). 10.1063/1.1432117
72. R. Nath, S. Tomov, and J. Dongarra, Int. J. High Perform. Comput. Appl. 24, 511 (2010). 10.1177/1094342010385729
73. S. Tomov, J. Dongarra, and M. Baboulin, Parallel Comput. 36, 232 (2010). 10.1016/j.parco.2009.12.005
74. G. Baym and L. P. Kadanoff, Phys. Rev. 124, 287 (1961). 10.1103/PhysRev.124.287
75. G. Baym, Phys. Rev. 127, 1391 (1962). 10.1103/PhysRev.127.1391