A quantitative error analysis of the mobility extraction according to the matthiessen rule in advanced MOS transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2415-2422

  Esseni, David ^a   Driussi, Francesco ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Coulomb limited mobility; Matthiessen's rule; mobility characterization; mobility simulation; strain

Indexed keywords

COULOMB-LIMITED MOBILITY; EXPERIMENTAL DATA; EXTRACTION PROCEDURE; MATTHIESSEN'S RULE; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MOBILITY EXTRACTION; QUANTITATIVE ERROR ANALYSIS; STRAIN LEVELS;

ERROR ANALYSIS; EXPERIMENTS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS;

EXTRACTION;

EID: 79960839723     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2151863     Document Type: Article

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