Two-band k · p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1563-1568

  Sverdlov, V ^a   Karlowatz, G ^a   Dhar, S ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

k p model; Mobility; Monte carlo simulations; Non parabolicity; Subband quantization; Ultra thin body FETs

Indexed keywords

BAND STRUCTURE; CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HEAT CONDUCTION; LANDFORMS; MAGNETIC FILMS; MOLECULAR BEAM EPITAXY; NONMETALS; SHEAR STRAIN; SILICON;

ANALYTICAL EXPRESSIONS; BRILLOUIN ZONE; BULK VALUES; EFFECTIVE MASSES; FILM-THICKNESS; LOW-FIELD MOBILITY; MOBILITY; MONTE CARLO SIMULATIONS; NON-PARABOLICITY; P-MODEL; PARABOLIC APPROXIMATIONS; PSEUDO POTENTIALS; SI FILMS; SILICON FILM THICKNESSES; STRAIN-DEPENDENT; SUB BANDS; SUBBAND QUANTIZATION; TWO-BAND MODELS; ULTRA-THIN BODY FETS; WITH OR WITHOUT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50849134832     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.019     Document Type: Article

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